Technical engineering whitepaper analyzing Silicon Germanium vs Indium Phosphide: Semiconductor Trades for Terahertz ISAC within next-generation 6G cellular and radar architectures.
This paper formalizes Silicon Germanium vs Indium Phosphide: Semiconductor Trades for Terahertz ISAC by establishing the multi-antenna RF channel matrix, noise covariances, and Cramer-Rao lower bounds for joint communication and radar estimation.
Extensive numerical simulations demonstrate that ISACRadio satisfies sub-millisecond detection thresholds while preserving full data throughput across wideband sub-THz carriers.